052-6435 rev a 6-2014 APT45GR65B2DU30 symbol parameter ratings unit v ces collector emitter voltage 650 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 118 a i c2 continuous collector current @ t c = 110c 56 i cm pulsed collector current 1 224 scwt short circuit withstand time: v ce = 325v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 543 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics APT45GR65B2DU30 650v, 45a, v ce(on) = 1.9v typical microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 350 a) 650 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 45a, t j = 25c) 1.9 2.4 collector-emitter on voltage (v ge = 15v, i c = 45a, t j = 125c) 2.4 collector-emitter on voltage (v ge = 15v, i c = 90a, t j = 25c) 2.6 i ces collector cut-off current (v ce = 650v, v ge = 0v, t j = 25c) 2 20 350 a collector cut-off current (v ce = 650v, v ge = 0v, t j = 125c) 2 200 i ges gate-emitter leakage current (v ge = 20v) 250 na unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). ultra fast npt - igbt ? with ultra soft recovery diode the ultra fast 650v npt-igbt ? family of products is the newest generation of igbts optimized for outstanding ruggedness and best trade-off between conduction and switching losses. features low saturation voltage low tail current rohs compliant smooth reverse recovery short circuit withstand rated high frequency switching ultra low leakage current snap-free switching combi (igbt and diode) downloaded from: http:///
APT45GR65B2DU30 052-6435 rev a 6-2014 thermal and mechanical characteristics dynamic characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 2900 pf c oes output capacitance 548 c res reverse transfer capacitance 268 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 325v i c = 45a 7.5 v q g 3 total gate charge 150 203 nc q ge gate-emitter charge 18 24 q gc gate- collector charge 74 100 t d(on) turn-on delay time inductive switching (25c) v cc = 433v v ge = 15v i c = 45a r g = 4.3 4 t j = +25c 15 ns t r current rise time 32 t d(off) turn-off delay time 100 t f current fall time 50 e on2 5 turn-on switching energy 1100 1650 j e off 6 turn-off switching energy 540 870 t d(on) turn-on delay time inductive switching (125c) v cc = 433v v ge = 15v i c = 45a r g = 4.3 4 t j = +125c 15 ns t r current rise time 32 t d(off) turn-off delay time 123 t f current fall time 52 e on2 5 turn-on switching energy 1600 2400 j e off 6 turn-off switching energy 800 1160 0 0.05 0.10 0.15 0.20 0.25 10 -4 10 -3 10 -2 0.1 1 10 -5 z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.1 d = 0.9 0.5 single pulse 0.3 0.05 0.02 typical performance curves symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) 0.23 c/w junction to case thermal resistance (diode) 0.80 r ja junction to ambient thermal resistance 40 w t package weight 0.22 oz 6.2 g downloaded from: http:///
052-6435 rev a 6-2014 APT45GR65B2DU30 typical performance curves 0 20 40 60 80 100 120 140 160 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 -50 -25 0 25 50 75 100 125 1 2 3 4 8 10 12 14 16 18 0 50 100 150 200 0 2 4 6 8 10 12 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 250 s pulse test <0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 22.5a i c = 45a i c = 90a i c = 45a i c = 90a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3, saturation voltage characteristics i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9, dc collector current vs case temperature i c , dc collector current (a) 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 6.5v 7v i c = 22.5a 8.0v 9.0v 7.5v 10v i c (a) figure 2, max frequency vs current (t case = 75c) t j = 150c 0 20 40 60 80 100 120 140 160 180 0 102030405060708090 frequency (khz) t j , junction temperature figure 8, breakdown voltage vs junction temperature bv ces , breakdown voltage (normalized) downloaded from: http:///
APT45GR65B2DU30 052-6435 rev a 6-2014 typical performance curves 0 2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 140 160 180 i c = 45a t j = 25c v ce = 520v v ce = 325v v ce = 130v gate charge (nc) figure 11, gate charge v ge , gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 100 0 2 04 0 6 08 0 10 100 1000 100 0 2 04 0 6 08 0 0 500 1000 1500 2000 100 125 75 50 25 0 0 500 1000 1500 2000 2500 50 0 1 02 0 3 04 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 100 02 04 06 08 0 v ce = 433v, v ge =15v, r g = 4.3 t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13, turn-off time vs collector current switching time (ns) r g , gate resistance ( ) figure 15, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14, energy loss vs collector current switching energy loss ( j) t j , junction temperature (c) figure 16, swiitching energy vs junction temperature switching energy losses ( j) t r t d(off) t f v ce = 433v, v ge =15v, r g = 4.3 t j = 25c t j = 125c v ce = 433v, v ge =15v, r g = 4.3 t j = 25c t j = 125c e on2 e off e on2 e off v ce = 433v, v ge =15v, i c = 45a t j = 125c switching energy loss ( j) e off e on2 v ce = 433v, v ge =15v, r g = 4.3 i c = 45a 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 1000 11 0 100 1000 v ce , collector-to-emitter voltage figure 17, minimum switching safe operating area i c , collector current (a) 1ms 0.1ms 10ms 100ms 0.01ms downloaded from: http:///
052-6435 rev a 6-2014 APT45GR65B2DU30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -4 10 -3 10 -2 0.1 1 10 -5 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultra soft recovery anti-parallel diode z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 18, maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 symbol characteristic / test conditions APT45GR65B2DU30 unit i f(av) maximum average forward current (t c = 82c, duty cycle = 0.5) 30 amps i f(rms) rms forward current (square wave, 50% duty) 41 i fsm non-repetitive forward surge current (t j = 45c, 8.3ms) 210 symbol characteristic / test conditions min typ max unit v f forward voltage i f = 30a 3 volts i f = 60a 3.9 i f = 60a, t j = 125c 3.5 symbol parameter test conditions min typ max unit t rr reverse recovery time i f = 1.0a, dif/dt= -100 a/ s, v r = 30v, t j = 25c 28 ns t rr reverse recovery time i f = 30 amps dif/dt = -200 a/ s v r = 433 volts t j = 25c 80 ns q rr reverse recovery charge 110 nc i rrm maximum reverse recovery current 3 amps e rr reverse recovery energy 2 j t rr reverse recovery i f = 30 amps dif/dt = -200 a/ s v r = 433 volts t j = 125c 343 ns q rr reverse recovery charge 965 nc i rrm maximum reverse recovery current 7 amps e rr reverse recovery energy 88 j t rr reverse recovery i f = 30 amps dif/dt = -1000 a/ s v r = 433 volts t j = 125c 124 ns q rr reverse recovery charge 1355 nc i rrm maximum reverse recovery current 24 amps e rr reverse recovery energy 211 j s softness factor (t b /t a ) i f = 15a, dif/dt= -1000 a/ s, v r = 800v, t j = 125c 2 typical performance curves downloaded from: http:///
APT45GR65B2DU30 052-6435 rev a 6-2014 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 0 0.2 0.4 0.6 0.7 1.0 1.2 1.4 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 0246 0 50 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 1200 t j = 125 c v r = 433v 15a 30a 60a t rr q rr i rrm duty cycle = 0.5 t j = 125 c v r = 433v 60a 15a 30a t j = 125 c v r = 433v 60a 30a 15a t j = 150 c t j = -55 c t j = 25 c t j = 125 c 0 20 40 60 80 100 120 140 0 10 200 300 400 500 600 700 v f , anode-to-cathode voltage (v) figure 19, f forward current vs. forward voltage i f , forward current (a) - di f /dt, current rate of change(a/ s) figure 20, reverse recovery time vs. current rate of change t rr , reverse recovery time (ns) -di f /dt, current rate of change (a/ s) figure 21, reverse recovery charge vs. current rate of change q rr , reverse recovery charge (nc) -di f /dt, current rate of change (a/ s) figure 22, reverse recovery current vs. current rate of change i rrm , reverse recovery current (a) t j , junction temperature ( c) figure 23, dynamic parameters vs. junction temperature k f , dynamic parameters (normalized 125c) case temperature ( c) figure 24, max average forward current vs. case temperature i f(av) (a) v r , reverse voltage (v) figure 25, junction capacitance vs. reverse voltage c j , junction capacitance ((pf) typical performance curves downloaded from: http:///
052-6435 rev a 6-2014 APT45GR65B2DU30 figure 27, diode reverse recovery waveform de? nition 4 3 1 2 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 26, diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing i rrm - maximum reverse recovery current t a - time to reach maximum reverse recovery current (i rrm ) t b - time from maximum reverse recovery current (i rrm ) to projected zero crossing based on a straight line from i rrm through 25% i rrm. t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero q rr - area under the curve de ? ned by i rrm and t rr 5 1 2 3 4 6 7 7 5 6 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) these dimensions are equal to the to-247 without the mounting hole. 2-plcs. dimensions in millimeters and (inches) t-max ? (b2) package outline 1.016(.040) collector (cathode) gate emitter (anode) collector (cathode) downloaded from: http:///
APT45GR65B2DU30 052-6435 rev a 6-2014 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information contained herein may not be modi ? ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of ? cer of microsemi. microsemi reserves the right to change the con ? guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to ? tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci ? cations believed to be reliable but are not veri ? ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's ? nal application. user or customer shall not rely on any data and performance speci ? cations or parameters provided by microsemi. it is the customers and users re- sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speci ? cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro ? t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions. disclaimer: downloaded from: http:///
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